Low voltage CMOS differential amplifier

ABSTRACT

A low voltage CMOS differential amplifier is provided. More specifically, in one embodiment, a device comprising a differential pair is provided. A self-biased transistor and a component are coupled to the differential pair. At least one of the self-biased transistor and the component supply a current to the differential pair, wherein the component supplies substantially all of the current when the self-biased transistor is operating in a triode state.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.11/494,356, filed Jul. 26, 2006, now U.S. Pat. No. 7,271,654, which is acontinuation of U.S. application Ser. No. 11/020,757, filed on Dec. 23,2004, now U.S. Pat. No. 7,230,486.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to integrated circuits and, moreparticularly, to integrated circuits implementing CMOS differentialamplifiers.

2. Description of the Related Art

This section is intended to introduce the reader to various aspects ofart that may be related to various aspects of the present invention,which are described and/or claimed below. This discussion is believed tobe helpful in providing the reader with background information tofacilitate a better understanding of the various aspects of the presentinvention. Accordingly, it should be understood that these statementsare to be read in this light, and not as admissions of prior art.

As most people are aware, an integrated circuit is a highly miniaturizedelectronic circuit that is typically designed on a semiconductivesubstrate. Over the last 10 years, considerable attention has been paidto designing smaller, lower-power integrated circuits. These smaller,lower-power integrated circuits are often used in portable electronicdevices that rely on battery power, such as cellular phones and laptopcomputers. As circuit designers research new ways to lower the powerconsumption of integrated circuits, they are constantly confronted withnew challenges that need to be overcome in order to create theintegrated circuits that will be part of the next generation computer,cellular phone, or camera.

The fundamental building block of the modem integrated circuit is thetransistor. Transistors are generally fabricated on a semiconductivesubstrate, such as a silicon substrate. Silicon transistors are createdby altering the electrical properties of silicon by adding othermaterials called “dopants” to the silicon. This process is known asdoping. In n-type doping, dopants are added to the silicon that provideextra electrons that do not bond with the silicon. These free electronsmake n-type silicon an excellent conductor. In p-type doping, silicon isdoped with elements that cause an empty space, known as a “hole,” todevelop in the silicon. Because these holes readily accept electronsfrom other silicon atoms, p-type silicon is typically also a goodconductor.

Even though p-type silicon and n-type silicon are each good conductors,they are not always good conductors when joined. These junctions, called“p-n junctions,” are essentially one way streets for current—allowing itto flow in one direction across the junction but not in the otherdirection. When current can flow across the p-n junction, it is said tobe “forward-biased,” and when current cannot flow across the p-njunction, it is considered to be “reverse-biased.”

A transistor is created by combining two p-n junctions. For example, atransistor might be arranged as either NPN or PNP. In this arrangement,a relatively small current (or voltage, depending on the type oftransistor) applied to the center layer will essentially “open up” thetransistor and permit a much greater current to flow across thetransistor as a whole. In this fashion, transistors can act as switchesor as amplifiers.

While there are numerous types of transistors, metal-oxide semiconductorfield-effect transistors (“MOSFETs”) have been particularly popular overthe past few years. One example of this type of MOSFET is known as ann-channel enhancement type MOSFET or NMOS transistor. The NMOStransistor is created by forming two heavily doped n-type regions in ap-type semiconductive substrate (i.e. NPN). These two n-type regionsform regions known as the source and drain regions. Next, a thin layerof an oxide insulator may be grown on the surface of the substrate andmetal, or another conductor, may be deposited on this oxide to create agate region. Terminals are then attached to the source region, the drainregion, and the gate region to create a semiconductor device with threeterminals: the source (“S”) terminal, the drain (“D”) terminal, and thegate (“G”) terminal.

A voltage V_(gs) placed between the gate terminal and the sourceterminal of the NMOS transistor will create an electrical field in thesemiconductive substrate below the gate terminal. This electrical fieldcauses mobile electrons in the source region, the drain region, and thesubstrate to accumulate and form an n-type conductive channel in thep-type substrate. This conductive channel is known as the “inducedchannel.” This n-type induced channel effectively connects the drain andsource regions together and allows a current, I_(d), to flow from thedrain to the source (i.e. opening up the transistor). The voltage V_(gs)that is sufficient to cause enough electrons to accumulate in thechannel to form an induced channel (i.e. to open up the channel) isknown as the threshold voltage or V_(th).

A transistor operating with a voltage V_(gs) less than the thresholdvoltage V_(th) is considered to be in the cut-off region because littleor no current is able to flow between the drain and the source of thetransistor. In many applications, it is preferable that the transistornot be in the cut-off region. One method of keeping a transistor out ofthe cut-off region is to apply a voltage V_(gs) to the transistor. Thisprocess is referred to as biasing. Two methods of biasing a transistorare self-biasing and fixed biasing. A transistor that has beenself-biased typically has its gate terminal coupled to either its owndrain terminal or to the terminal of another transistor locatedsomewhere else in the circuit. A fixed biased transistor, on the otherhand, is typically coupled to a voltage source either directly orthrough a resistor. In many digital applications, self-biasing ispreferred because it is typically results in a more symmetrical digitaloutput.

The voltage V_(gs) is not the only voltage that affects the flow ofcurrent between the drain region and the source region. A voltage V_(ds)applied between the drain region and source region will appear as avoltage drop across the length of the induced channel. This means thatif the voltage V_(ds) is applied, the voltage along the induced channelmay vary from the voltage V_(gs) at the source terminal to the voltageV_(gs) minus V_(ds) at the drain terminal. This voltage change along thelength of the induced channel may create a channel that is not a uniformdepth. This variation in channel depth can affect the operation of thetransistor. For instance, when the voltage V_(ds) is less than thevoltage V_(gs) minus V_(th), the depth of the channel (and thus thecurrent through the channel, I_(d)) changes greatly as the voltageV_(ds) changes. Under these conditions, the transistor is operating in astate known as “triode.” A transistor operating in the triode state maybe referred to as a transistor in the triode region.

However, when the voltage V_(ds) is greater than or equal to the voltageV_(gs) minus V_(th), the current I_(d) is unaffected by changes in thevoltage V_(ds). This state is known as saturation, and a transistoroperating in this state is considered to operating in the saturationregion. The voltage V_(ds) at which a transistor enters the saturationregion is known as the saturation voltage. Because the voltage V_(ds) toI_(d) relationship is more stable in the saturation region than in thetriode region, it may be preferable to operate a transistor in thesaturation region when using the transistor as an amplifier.

A related type of MOSFET, known as p-channel enhancement type MOSFET orPMOS, is created on an n-type substrate with source and drain regionscomposed of p-type regions (i.e. PNP). PMOS transistors operate verysimilarly to NMOS transistors except that the threshold voltage isnegative (i.e. positive between the source terminal and the gateterminal) and current flows from the source terminal to the drainterminal. Both PMOS and NMOS transistors may be used in circuits thatemploy Complementary MOS (“CMOS”) technology. Because CMOS technologyallows circuit designers to employ both NMOS and PMOS transistors, it isone of the primary circuit design technologies in use today.

CMOS transistors (i.e. NMOS and PMOS transistors) can be used in a widevariety of amplifiers and switches. One such use is as a differentialamplifier. The differential amplifier is one of the most widely usedcomponents in analog circuits. Among other things, it is typically usedin CMOS input buffers, in some types of video amplifiers, and inbalanced line receivers for digital data transmission. CMOS differentialamplifiers have been an important part of the rapid growth of CMOStechnologies over the past few years.

Generally, a differential amplifier has two voltage inputs, referred toas V_(ref) and V_(in), and one voltage output, referred to as V_(out).Each of the inputs of the differential amplifier is sensitive to theother input. If V_(in) is greater than V_(ref), then V_(out) may be afirst voltage level. If, however, V_(ref) is greater than V_(in),V_(out) may be a second voltage level (typically a higher voltagelevel). This relationship permits the differential amplifier to “detect”the voltage relationship between V_(ref) and V_(in). More specifically,a typical MOSFET differential pair consists of two NMOS transistors ortwo PMOS transistors. An input voltage V_(ref) may be coupled to thegate terminal of one of these transistors and an input voltage V_(in)may be coupled to the gate terminal of the other transistor. Thedifferential pair may be typically coupled to a tail current source. IfV_(in) is greater than V_(ref), the increased voltage at the gateterminal of V_(in), transistor will lower the amount of current that canflow through that V_(in) transistor compared to the amount of currentthat can flow through the V_(ref) transistor. When this happens, thecurrent from the tail current source may not divide evenly, and thisdifference in tail current may result in a V_(out) at a low voltagelevel. Alternatively, if V_(ref) is greater than V_(in), the amount ofcurrent that can flow through the V_(ref) transistor will be lower thanthe amount of current that can flow through the V_(in) transistor, whichmay result in a V_(out) at a high voltage level.

A transistor may be used as the tail current source in the MOSFETdifferential pair discussed above. If the tail current source transistoris not biased properly, current conduction through the transistor may bereduced or eliminated and current levels through the induced channel maybe unstable. Disadvantageously, if the tail current source is improperlybiased, the differential amplifier may not function properly. Tailcurrent source transistors are typically biased using the self-biasingtechniques previously described. These self-biasing techniques, however,may not be effective at the low supply voltage levels that are typicallyused in many modern, low-power devices.

Embodiments of the present invention may address one or more of theproblems set forth above.

SUMMARY OF THE INVENTION

Certain aspects commensurate in scope with the originally claimedinvention are set forth below. It should be understood that theseaspects are presented merely to provide the reader with a brief summaryof certain forms the invention might take and that these aspects are notintended to limit the scope of the invention. Indeed, the invention mayencompass a variety of aspects that may not be set forth below.

Embodiments of the invention provide a method and an apparatus foroperating a differential amplifier at low supply voltages. Specifically,in one embodiment, this is accomplished by providing a device comprisinga differential pair coupled to a first tail current transistor and acomponent wherein the first tail current transistor is configured toprovide a tail current to the differential pair and the component isconfigured to provide a tail current to the differential pair when thefirst tail current transistor is operating in a triode region or in acut-off region.

In an alternate embodiment of the invention, this is accomplished byproviding a device comprising a differential amplifier, wherein thedifferential amplifier comprises a fixed biased transistor coupled inparallel to a self-biased transistor and wherein the fixed biasedtransistor and the self-biased transistor are configured to provide atail current to the differential amplifier.

In still another embodiment of the invention, there is provided a devicecomprising a PMOS differential amplifier and an NMOS differentialamplifier, wherein the NMOS differential amplifier is coupled to thePMOS differential amplifier and wherein the device is configured tooperate as an inverter when a supply voltage is below a predeterminedthreshold.

BRIEF DESCRIPTION OF THE DRAWINGS

Advantages of the invention may become apparent upon reading thefollowing detailed description and upon reference to the drawings inwhich:

FIG. 1 illustrates a circuit diagram of an exemplary low voltage PMOSdifferential amplifier in accordance with embodiments of the presentinvention;

FIG. 2 illustrates a circuit diagram of an exemplary low voltage NMOSdifferential amplifier in accordance with embodiments of the presentinvention;

FIG. 3 illustrates a circuit diagram of an exemplary complimentarydifferential amplifier input buffer in accordance with embodiments ofthe present invention; and

FIG. 4 illustrates a block diagram of an exemplary system employing alow voltage differential amplifier circuit in accordance withembodiments of the present invention.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

One or more specific embodiments of the present invention will bedescribed below. In an effort to provide a concise description of theseembodiments, not all features of an actual implementation are describedin the specification. It should be appreciated that in the developmentof any such actual implementation, as in any engineering or designproject, numerous implementation-specific decisions must be made toachieve the developers' specific goals, such as compliance withsystem-related and business-related constraints, which may vary from oneimplementation to another. Moreover, it should be appreciated that sucha development effort might be complex and time consuming, but wouldnevertheless be a routine undertaking of design, fabrication, andmanufacture for those of ordinary skill having the benefit of thisdisclosure.

Many conventional self-biased CMOS differential amplifiers fail tooperate properly at low supply voltages because their tail currentsource transistors either enter the triode region or cut off completely.Amongst other things, embodiments of the present invention may improvethe operation of CMOS differential amplifiers and other related devicesat low supply voltages. In one embodiment, this may be accomplished byadding a fixed biased tail current source transistor or a resistor inparallel with a self-biased tail current source transistor to thedifferential amplifiers.

Turning now to the drawings and referring initially to FIG. 1, a circuitdiagram of an exemplary low voltage PMOS differential amplifier inaccordance with embodiments of the present invention is illustrated andgenerally designated by a reference numeral 10. The PMOS differentialamplifier 10 comprises a voltage source Vcc 12 and six transistors M1-M614, 16, 20, 24, 28, and 32. The voltage source Vcc 12 may be anydesirable type of voltage source and may supply many circuits on asingle microchip.

The voltage source Vcc 12 may be coupled to a source terminal of a fixedbiased tail current source transistor 14 (referred to as the transistorM1 14) and to a source terminal of aself-biased tail current sourcetransistor 16 (referred to as the transistor M2 16). The gate terminalof the transistor M1 14 may be coupled to ground, and the drain regionof the transistor M1 14 may be coupled to the drain terminal of thetransistor M2 16, a source terminal of the transistor M3 20, and asource terminal of the transistor M4 22. The gate terminal of thetransistor M2 16 may be coupled to a source terminal of the transistorM5 28, to a gate terminalof the transistor M5 28, and to a gate terminalof the transistor M6 32. The transistor M1 14 may supply less currentthan the transistor M2 16. In one embodiment there may be a 1:4 ratio oftransistor length/width values between the transistor M1 14 and thetransistor M2 16. In another embodiment this ratio may be 1:8, and inalternate embodiments, additional transistor size ratios may beimplemented to achieve specific design goals. In another embodiment, thefixed biased tail current source transistor 14 may be replaced orsupplemented with a resistor.

The transistor M3 20 and the transistor M4 22 may comprise a PMOSdifferential pair. The transistor M3 20 and the transistor M4 22 may becomprised of two matching CMOS transistors. As depicted in FIG. 1, thePMOS differential pair may have two inputs: a voltage input V_(ref) 18and a voltage input V_(in) 24. These two voltage inputs (18 and 24) maybe respectively coupled to a gate terminal of the transistor M3 20 and agate terminal of the transistor M4 22. Typically, the value of V_(ref)18 will be held constant at a known level. This permits the PMOSdifferential amplifier 10 to produce an output corresponding to adifference between the voltage input V_(in) 24 and the voltage inputV_(ref) 18. In this embodiment, a drain terminal of the transistor M4 22may be coupled to an output V_(out) 26.

In addition to being coupled to the output V_(out) 26, the drain regionof transistor M4 22 may also be coupled to the source region of thetransistor M6 32. In the embodiment shown in FIG. 1, the M5 28transistor and the M6 32 transistor are each NMOS transistors thatcomprise a current mirror. The transistor M5 28 and the transistor M6 32may be comprised of two matching CMOS transistors. The source terminalof the transistor M5 28 is coupled to the gate terminal of thetransistor M5 28, to the gate terminal of the transistor M6 22, and tothe gate terminal of the transistor M2 16. Lastly, a drain terminal ofthe transistor M5 28 and a drain terminal of the transistor M6 32 may becoupled to ground.

To illustrate the operation of the PMOS differential amplifier 10,assume initially that the supply voltage Vcc 12 is high enough that thetransistor M2 16 is operating in the saturation region. Applying avoltage to input V_(in) 24 to input V_(ref) 18 may create a voltagebetween the source terminal and the gate terminal that is greater thanthe threshold voltage for both the M3 transistor 20 and the transistorM4 22. It is important to note that because the transistor M3 20 and thetransistor M4 24 are PMOS transistors the channel will conduct currentwhen the source to gate voltage is greater than the threshold voltage.This is opposite from NMOS transistors, which will be discussed later,in which the channel conducts current when the gate to source voltage isgreater than the threshold voltage. Assuming that both the voltageV_(ref) and the voltage V_(in) are sufficient to bias the source to gatevoltage of the transistor M3 20 and the transistor M4 22, the inducedchannels of the transistor M3 20 and the transistor M4 22 will open topermit the flow of current through the transistors. The amount ofcurrent available to flow through the transistor M3 20 and thetransistor M4 22 may be determined by the amount of current beingproduced by the transistor M1 14 and the transistor M2 16 (the tailcurrent source transistors).

Turning next to the operation of the PMOS differential amplifier 10. Ifthe voltage applied to V_(in) is greater than the voltage applied toV_(ref), transistor M3 20 may draw more tail current (i.e., the currentat the drain terminal of the transistor Ml 14 plus the current at thedrain terminal of the transistor M2 16) than the transistor M4 22. Eventhough these two currents are different, the current mirror created bythe transistor M5 28 and the transistor M6 32 will still attempt toequalize the currents at the source terminal of the transistor M5 28 andthe source terminal of the transistor M6 32. However, because thecurrent provided by the transistor M4 22 is less than the currentprovided through the transistor M3 20, a low voltage will be generatedat V_(out). Thus, a low V_(out) may indicate that V_(ref) is less thanV_(in).

Conversely, V_(out) may be high if V_(in) is less than V_(ref). In thiscase, transistor M3 20 may draw less tail current (i.e., the current atthe drain terminal of the transistor M1 14 plus the current at the drainterminal of the transistor M2 16) than the transistor M4 22. As above,even though these two currents are different, the current mirror createdby the transistor M5 28 and the transistor M6 32 will still attempt toequalize the currents at the source terminal of the transistor M5 28 andthe source terminal of the transistor M6 32. However, because thecurrent provided by the transistor M4 22 is greater than the currentprovided through the transistor M3 20, a high voltage will be generatedat V_(out). Thus, a high V_(out) may indicate that V_(ref) is greaterthan V_(in).

As stated above, when the supply voltage Vcc 12 is high, typically, thetransistor M2 16 will have no problem supplying sufficient tail currentfor the PMOS differential amplifier 10 to function properly. Recall fromabove, that the transistor M2 16 will typically be four to eight timeslarger than the transistor M1 14. As suggested above, this may beadvantageous because self-biased transistors such as the transistor M216, are typically able to produce symmetrical digital outputs.

As the supply voltage Vcc 12 decreases, however, the voltage between thesource terminal and the gate terminal of the transistor M2 16 may fallbelow the threshold voltage of the transistor M2 16. If this happens,the transistor M2 16 may enter the triode region or the cut-off region.If the transistor M2 16 were the sole source of tail current in the PMOSdifferential amplifier 10, this could cause the PMOS differentialamplifier 10 to malfunction. In this case, it may be necessary to addadditional components to compensate for the malfunctioning differentialamplifier. In one conventional embodiment, this was done by adding atransistor/transistor logic based (“TTL”) buffer in parallel with thedifferential amplifier. While effective, adding a TTL bufferdisadvantageously slowed down the operation of the circuit. In addition,the added TTL buffer also occupies more area on the circuit itself.Further, adding a TTL buffer also disadvantageously requires theaddition of an extra mode to select between the differential amplifierand the TTL buffer.

The PMOS differential amplifier 10, on the contrary, is able to functionproperly at low supply voltages without an additional buffer. Eventhough the transistor M2 16 (self-biased) may enter the triode region atlower supply voltages, the transistor M1 14 (fixed biased) will remainin the stable saturation region even at lower supply voltages. Asdepicted in FIG. 1, the source terminal of the transistor M1 14 iscoupled to the voltage supply Vcc 12, and the gate terminal of thetransistor M1 14 is coupled to ground. Unlike the transistor M2 16, thesource to gate voltage may depend solely on the supply voltage Vcc 12.As such, even at lower supply voltages, the source to gate voltage willtypically be above the threshold voltage of the transistor M1 14. Asdescribed above, in an alternate embodiment, the transistor M1 14 may bereplaced or supplemented with a resistor.

For example, assume that the threshold voltage of both the transistor M114 and the transistor M2 16 is 0.4-0.5 volts and the supply voltage Vcc12 is 1.2 volts. In this case, if the voltage on the gate terminal ofthe transistor M2 16 exceeds 0.7 volts, the transistor M2 may enter thetriode region or the cut-off region (because the voltage between thesource terminal and the gate terminal will be less than the thresholdvoltage of 0.5 volts). On the contrary, at the same supply voltage of1.2 volts, the voltage between the source terminal and the gate terminalof the transistor M1 14 will be 1.2 volts (i.e. the source to gatevoltage will match the voltage source Vcc 12). In another embodiment ofthe invention, the transistor M1 14 may supply over 90% of the tailcurrent when the supply voltage Vcc 12 is less than 1.3V. In this way,the PMOS differential amplifier 10 may be able to function properly evenat lower supply voltages.

Turning next to FIG. 2, a circuit diagram illustrating an exemplary lowvoltage NMOS differential amplifier in accordance with embodiments ofthe present invention is depicted and generally designated by areference numeral 50. The NMOS differential amplifier 50 functionssubstantially similar to the PMOS differential amplifier 10 depicted inFIG. 1. There are, however, several distinct differences. The NMOSdifferential amplifier 50 may include a voltage source Vcc 52 and sixCMOS transistors M7-M12 54, 56, 64, 66, 72, and 74. As with the voltagesource Vcc 12 described in relation to FIG. 1, the voltage source Vcc 52may be virtually any type of voltage source and may supply numerouscircuits on a single microchip.

The function of each of the transistors in the NMOS differentialamplifier 50 may be essentially a mirror image of the function of eachof the transistors in the PMOS differential amplifier 10 depicted inFIG. 1. Specifically, the transistor M7 54 and the transistor M8 56 maybe PMOS transistors that comprise a current mirror. These transistorsmay be coupled to an NMOS differential pair comprised of the transistorM9 64 and the transistor M10 66. Similar to the PMOS differentialamplifier 10, the transistor M9 64 may be coupled to an input voltageV_(ref) 62, and the transistor M10 66 may be coupled to an input voltageV_(in) 68. This NMOS differential pair in turn may be coupled to twotail current source transistors, the transistor M1 72 and the transistorM2 74. The transistor M1 72 may be a fixed biased transistor and thusits gate terminal may be coupled to the supply voltage Vcc 52. Inalternate embodiments, the gate terminal of the transistor M11 72 may becoupled to an alternate voltage source. The transistor M12 74 may be aself-biased transistor and may be coupled to a gate terminal of thetransistor M7 54 and a gate terminal of the transistor M8 56.

The NMOS differential amplifier 50 may function similarly to the PMOSdifferential amplifier 10 depicted in FIG. 1. Specifically, when theinput voltage V_(ref) 62 is greater than the input voltage V_(in) 68,the voltage V_(out) 60 may be low. However, if the input voltage V_(in)68 is less than the input voltage V_(ref) 62, the voltage V_(out) 60 maybe high. In this way, similar to the PMOS differential amplifier 10, theNMOS differential amplifier 50 may be able to detect the relationshipbetween the voltage V_(in) 68 and the voltage V_(ref) 62.

The tail current source transistors in the NMOS differential amplifier50 also function similarly to those described in relation to the PMOSdifferential amplifier 10 in FIG. 1. As before, the NMOS differentialamplifier 50 has one self-biased tail current source transistor, i.e.,the transistor M12 74, and one fixed biased tail current sourcetransistor, i.e., the transistor M11 72. The transistor M12 74 willtypically conduct four to eight times more current in its saturationregion than the transistor M11 72, although virtually any ratio ofcurrents is possible depending on the design goals. As with the PMOSdifferential amplifier 10, at higher supply voltages the transistor M1274 may provide the bulk of the tail current. However, as the supplyvoltage drops, the transistor M12 74 may enter its triode region and maynot be able to supply a stable tail current. In this case, thetransistor M11 72 may still be able to continue to supply a tail currentbecause the gate terminal of the transistor M11 72 may be coupled to thevoltage source Vcc 52, and the source terminal of the transistor M11 72may be coupled to ground. Thus, as long as the supply voltage Vcc 52remains higher than the threshold voltage of the transistor M11 72, theNMOS differential amplifier 50 may be able to function properly. Becausethe threshold voltage of the typical transistor M11 72 is well belowwhat is typically considered a low supply voltage, the above-describedfeatures permit the NMOS differential amplifier 50 to function properlyeven at low supply voltages.

As stated above in the background section, one of the primary uses fordifferential amplifiers, such as the PMOS differential amplifier 10 orthe NMOS differential amplifier 50 is in complementary differentialamplifier input buffers. Complementary differential amplifier inputbuffers are typically used to convert low voltage swing input signals atthe input pins of an integrated circuit to a full digital (i.e. logic)voltage level that can be used inside the integrated circuit. Typically,complementary differential amplifier input buffers are used in memorychips, such as dynamic random access memory (“DRAM”) or static randomaccess memory (“SRAM”), in flash memory, in processors, or inmicrocontrollers. Those skilled in the art, however, will appreciatethat complementary differential amplifier input buffers may be used in awide variety of applications in addition to those listed above.

Returning now to the drawings and referring to FIG. 3, a schematicdiagram of an exemplary complementary differential amplifier inputbuffer in accordance with embodiments of the present invention isdepicted and generally designated by a reference numeral 100. Thecomplementary differential amplifier input buffer 100 includes a PMOSdifferential amplifier 102, an NMOS differential amplifier 104, and aninverter 106. The PMOS differential amplifier 102 may function similarlyto the PMOS differential amplifier 10 depicted in FIG. 1, and the NMOSdifferential amplifier 104 may function similarly to the NMOSdifferential amplifier 50 depicted in FIG. 2. The outputs of the PMOSdifferential amplifier 102 and the NMOS differential amplifier 104 maybe coupled together to create a combined output V_(out) 120 in order tomaximize the common mode range of the complementary differentialamplifier input buffer 100. The common mode range is the range of inputvoltages over which a differential amplifier behaves in a linearfashion. The inverter 106 may be coupled to the output V_(out) 120 inorder to convert the output V_(out) 120 to a full digital voltage leveloutput, V_(fullout). The inverter 106 may comprise the transistors 134and 136. Those skilled in the art will appreciate that in alternateembodiments the inverter 106 may be omitted.

Before discussing the low voltage behavior of the complementarydifferential amplifier input buffer 100, it may be helpful to brieflydiscuss a conventional method for handing low supply voltages incomplementary differential amplifier input buffers. As described above,conventional differential amplifiers may not operate properly at lowersupply voltages. Thus, at lower supply voltages, a complementarydifferential amplifier input buffer having only conventionaldifferential amplifiers may not operate properly. To overcome thispotential deficiency, conventional complementary differential amplifierinput buffers typically include a TTL inverter coupled in parallel withthe differential amplifiers. This TTL inverter is typically able toproduce an output at lower supply voltages if the differentialamplifiers do not operate properly. However, in addition to otherdisadvantages, adding this extra TTL inverter in parallel to theconventional PMOS differential amplifier and a conventional NMOSdifferential amplifier increases the capacitance of the input voltageV_(in), and slows the performance of the conventional complementarydifferential amplifier input buffer by approximately 100 psec.

Because the PMOS differential amplifier 102 and the NMOS differentialamplifier 104 are able to continue functioning even at lower supplyvoltages, a TTL inverter may not be needed in the complementarydifferential amplifier input buffer 100. Specifically, when aself-biased tail current source transistor 110 in the PMOS differentialamplifier 102 and a self-biased tail current source transistor 116 inthe NMOS differential amplifier 104 have both entered the cut-offregion, a fixed biased tail current source transistor 108 and a voltageinput transistor 112 in the PMOS differential pair 102 combine with afixed biased tail current source transistor 114 and input voltagetransistor 118 in the NMOS differential amplifier 104 to function likean inverter. In terms of digital logic, the transistor 108 and thetransistor 114 operate as switches which are turned on. The input signalis connected to the gate terminal of the transistor 112 and thetransistor 118 which have their drain terminals coupled together. Thiscreates the inverter. Because this inverter functions at low supplyvoltages, it may obviate the need for a separate TTL inverter and thusincrease the operating speed of the complementary differential amplifierinput buffer 100 over conventional complementary differential amplifierinput buffers. The complementary differential amplifier input buffer 100may also include the transistors 122-132. These transistors may functionsubstantially similar to their respective counterparts discussed abovein regard to the PMOS differential amplifier 10 or the NMOS differentialamplifier 50. Further, as noted above, in alternate embodiments, thefixed biased tail current source transistors 108 and 114 may be replacedor supplemented with resistors.

The differential amplifiers discussed above are particular useful in thedesign of memory devices, processors, and computer systems. For example,turning back to the drawings and referring to FIG. 4, a block diagram ofan exemplary system employing a CMOS differential amplifier inaccordance with embodiments of the invention is illustrated andgenerally designated by a reference numeral 150. The system 150 mayinclude one or more processors or central processing units (“CPUs”) 152.The CPU 152 may be used individually or in combination with other CPUs.While the CPU 152 will be referred to primarily in the singular, it willbe understood by those skilled in the art that a system with any numberof physical or logical CPUs may be implemented. Examples of suitableCPUs include the Intel Pentium 4 processor and the AMD Athelonprocessor. In one embodiment of the invention, the CPU 152 may employthe complementary differential amplifier input buffer amplifierdescribed in reference to FIG. 3 or the differential amplifier describedabove in reference to FIGS. 1 and 2.

A chipset 14 may be operably coupled to the CPU 152. The chipset 154 isa communication pathway for signals between the CPU 152 and othercomponents of the system 150, which may include, a memory controller158, an input/output (“I/O”) bus 164, and a disk drive controller 160.Depending on the configuration of the system, any one of a number ofdifferent signals may be transmitted through the chipset 154, and thoseskilled in the art will appreciate that the routing of the signalsthroughout the system 150 can be readily adjusted without changing theunderlying nature of the system.

As stated above, the memory controller 158 may be operably coupled tothe chipset 154. In alternate embodiments, the memory controller 158 maybe integrated into the chipset 154. The memory controller 158 may beoperably coupled to one or more memory devices 156. In one embodiment ofthe invention, the memory devices 156 may employ the complementarydifferential amplifier input buffer amplifier described in reference toFIG. 3 or the differential amplifier described in reference to FIGS. 1and 2. The memory devices 156 may be any one of a number of industrystandard memory types, including but not limited to, single inlinememory modules (“SIMMs”) and dual inline memory modules (“DIMMs”). Incertain embodiments of the invention, the memory devices 156 mayfacilitate the safe removal of the external data storage devices bystoring both instructions and data.

The chipset 154 may also be coupled to the I/O bus 164. The I/O bus 162may serve as a communication pathway for signals from the chipset 154 toI/O devices 168-172. The I/O devices 168-172 may include a mouse 168, avideo display 170, or a keyboard 172. The I/O bus 164 may employ any oneof a number of communications protocols to communicate with the I/Odevices 168-172. In alternate embodiments, the I/O bus 164 may beintegrated into the chipset 154.

The disk drive controller 160 may also be operably coupled to thechipset 154. The disk drive controller 160 may serve as thecommunication pathway between the chipset 154 and one or more internaldisk drives 162. In certain embodiments of the invention, the internaldisk drive 162 may facilitate disconnection of the external data storagedevices by storing both instructions and data. The disk drive controller160 and the internal disk drives 162 may communicate with each other orwith the chipset 154 using virtually any type of communication protocol,including all of those mentioned above with regard to the I/O bus 164.

It is important to note that the system 150 described above in relationto FIG. 4 is merely one example of a system employing a CMOSdifferential amplifier. In alternate embodiments, such as cellularphones or digital cameras, the components may differ from the embodimentshown in FIG. 4.

While the invention may be susceptible to various modifications andalternative forms, specific embodiments have been shown by way ofexample in the drawings and have been described in detail herein.However, it should be understood that the invention is not intended tobe limited to the particular forms disclosed. Rather, the invention isto cover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the followingappended claims.

1. A device comprising: a differential pair; a self-biased transistorcoupled to the differential pair, wherein a gate terminal of theself-biased transistor is coupled to gate terminals of additionaltransistors; and a component coupled to the differential pair, whereinat least one of the self-biased transistor and the component supply acurrent to the differential pair, and wherein the component suppliessubstantially all of the current when the self-biased transistor isoperating in a triode state.
 2. The device of claim 1, wherein thecomponent comprises at least one of a fixed biased transistor and aresistor.
 3. The device of claim 2, wherein the self-biased transistoris at least four times larger than the fixed biased transistor width. 4.The device of claim 1, wherein the component is parallel with theself-biased transistor.
 5. The device of claim 1, wherein substantiallyall of the current comprises over 90% of the current.
 6. A devicecomprising: a differential pair; a self-biased transistor coupled to thedifferential pair, wherein a gate terminal of the self-biased transistoris coupled to terminals of three other transistors; and a componentcoupled to the differential pair, wherein at least one of theself-biased transistor and the component supply a current to thedifferential pair, and wherein the component supplies substantially allof the current when the self-biased transistor is in the cut-off region.7. The device of claim 6, wherein the component comprises at least oneof a fixed biased transistor and a resistor.
 8. The device of claim 7,wherein the self-biased transistor is at least four times larger thanthe fixed biased transistor width.
 9. The device of claim 6, wherein thecomponent is parallel with the self-biased transistor.
 10. The device ofclaim 6, wherein substantially all of the current comprises over 90% ofthe current.
 11. A device comprising: a differential pair; a self-biasedtransistor coupled to the differential pair, wherein a gate terminal ofthe self-biased transistor is coupled to a drain terminal of atransistor of the differential pair; and a component coupled to thedifferential pair, wherein at least one of the self-biased transistorand the component supply a current to the differential pair, and whereinthe component supplies substantially all of the current when theself-biased transistor is not operating in a saturation state.
 12. Thedevice of claim 11, wherein the component comprises at least one of afixed biased transistor and a resistor.
 13. The device of claim 12,wherein the self-biased transistor is at least four times larger thanthe fixed biased transistor width.
 14. The device of claim 11, whereinthe component is parallel with the self-biased transistor.
 15. Thedevice of claim 11, wherein substantially all of the current comprisesover 90% of the current.